US Patent Issued to SEMICONDUCTOR COMPONENTS INDUSTRIES on Sept. 8 for "Vertical shielded gate accumulation field effect transistor" (American, Belgian Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,206, issued on Sept. 8, was assigned to SEMICONDUCTOR COMPONENTS INDUSTRIES LLC (Scottsdale, Ariz.).

"Vertical shielded gate accumulation field effect transistor" was invented by Peter Moens (Erwetegem, Belgium), Balaji Padmanabhan (Chandler, Ariz.), Dean E. Probst (West Jordan, Utah), Prasad Venkatraman (Gilbert, Ariz.), Tirthajyoti Sarkar (Fremont, Calif.) and Gary Horst Loechelt (Tempe, Ariz.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An accumulation MOSFET includes a plurality of device cells. Each device cell includes a mesa adjoining a vertical trench is disposed in a doped semiconductor substrate. The mesa has a top mesa portion disposed ...