US Patent Issued to SEMICONDUCTOR COMPONENTS INDUSTRIES on Oct. 27 for "Epitaxial field stop region for semiconductor devices" (New York, Arizona Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,668, issued on Oct. 27, was assigned to SEMICONDUCTOR COMPONENTS INDUSTRIES LLC (Scottsdale, Ariz.).

"Epitaxial field stop region for semiconductor devices" was invented by Naveen Ganagona (Fishkill, N.Y.) and George Chang (Tempe, Ariz.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a backside contact and a substrate. An epitaxial field stop region may be formed on the substrate with a graded doping profile that decreases with distance away from the substrate, and an epitaxial drift region may be formed adjacent to the epitaxial field stop region. A frontside device may be formed on the epitaxial drift region."

The p...