US Patent Issued to Seiko Epson on Sept. 1 for "Piezoelectric element including diffusion inhibition layer between substrate and piezoelectric layer, and piezoelectric element application device" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,388, issued on Sept. 1, was assigned to Seiko Epson Corp. (Tokyo).

"Piezoelectric element including diffusion inhibition layer between substrate and piezoelectric layer, and piezoelectric element application device" was invented by Yasuhiro Itayama (Kai, Japan), Yasuhiro Horiba (Shiojiri, Japan) and Masahiro Takeuchi (Chino, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A piezoelectric element according to the present disclosure includes: a substrate containing silicon; a first electrode formed on the substrate; a piezoelectric layer formed on the first electrode and containing potassium, sodium, and niobium; and a second electrode formed on ...