ALEXANDRIA, Va., June 16 -- United States Patent no. 12,654,445, issued on June 16, was assigned to SEIKO EPSON Corp. (Tokyo).
"Single crystal silicon substrate, liquid discharge head, and method for manufacturing single crystal silicon substrate" was invented by Masahiro Fujii (Shiojiri, Japan), Koji Kitahara (Ina, Japan), Noboru Furuya (Chino, Japan) and Motoki Takabe (Shiojiri, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A single crystal silicon substrate at least a part of which constitutes a flow path for liquid includes a first through-hole including an inclined side wall inclined with respect to a substrate surface of the single crystal silicon substrate, and a second through-hole constitutin...