US Patent Issued to SEC CARBON on May 12 for "SiC single-crystal growth apparatus and method of growing SiC crystal" (Japanese Inventor)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,624,474, issued on May 12, was assigned to SEC CARBON LTD. (Amagasaki, Japan).

"SiC single-crystal growth apparatus and method of growing SiC crystal" was invented by Hiromu Shiomi (Amagasaki, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An SiC single-crystal growth apparatus and a method of growing an SiC crystal are provided capable of reducing variations in the temperature distribution in the seed crystal and/or reducing deformation of, and/or damage to, the seed crystal, thereby growing an SiC single crystal with reduced defects and/or cracks. An SiC single-crystal growth apparatus (1) includes: a heating vessel (10) including a source materi...