US Patent Issued to Sandisk Technologies on Sept. 8 for "Three-dimensional memory device containing multi-level word line contact wells and methods for manufacturing the same" (California Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,484, issued on Sept. 8, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Three-dimensional memory device containing multi-level word line contact wells and methods for manufacturing the same" was invented by Mark D. Kraman (San Jose, Calif.), Johann Alsmeier (San Jose, Calif.), James Kai (Santa Clara, Calif.), Koichi Matsuno (Fremont, Calif.), Jixin Yu (Milpitas, Calif.), Ruogu Matthew Zhu (San Jose, Calif.) and Seyyed Ehsan Esfahani Rashidi (Milpitas, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes an alternating stack of insulating layers and electrically conductive layers, memory openings vertically ex...