US Patent Issued to Sandisk Technologies on Sept. 8 for "Non-volatile memory with word line ramp sensing for memory cell tracking" (California Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,648, issued on Sept. 8, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Non-volatile memory with word line ramp sensing for memory cell tracking" was invented by Albert Chen (Milpitas, Calif.), Eric Fu (Sunnyvale, Calif.), Jiahui Yuan (Fremont, Calif.), Anirudh Amarnath (San Jose, Calif.) and Xiang Yang (Santa Clara, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A non-volatile storage apparatus stores data in the non-volatile memory cells by programming the non-volatile memory cells to a set of data states and reads data stored in the non-volatile memory cells by sensing for a set of read reference levels for the data states. ...