US Patent Issued to Sandisk Technologies on Sept. 1 for "Three-dimensional memory device including replacement insulating layers and methods of forming the same" (Japanese, American Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,162, issued on Sept. 1, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Three-dimensional memory device including replacement insulating layers and methods of forming the same" was invented by Noriyuki Nagahata (Yokkaichi, Japan), Masanori Tsutsumi (Yokkaichi, Japan), Fei Zhou (San Jose, Calif.) and Raghuveer S. Makala (Campbell, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a memory device includes forming an alternating stack of disposable material layers and silicon nitride layers over a substrate, forming a memory opening through the alternating stack, forming a memory film in the memory opening, formin...