ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,639, issued on Sept. 1, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Non-volatile memory array with integrated memory and access transistors and method of making the same" was invented by Mark Kraman (San Jose, Calif.), Kartik Sondhi (Milpitas, Calif.), Peng Zhang (Fremont, Calif.), Johann Alsmeier (San Jose, Calif.), Senaka Kanakamedala (San Jose, Calif.) and Yan Li (Milpitas, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device structure includes base semiconductor rail structures overlying a semiconductor substrate, bottom bit lines contacting a sidewall of a respective one of the base semiconductor rail structures, a ...