US Patent Issued to Sandisk Technologies on Sept. 1 for "Memory device containing constricted channel ends and methods of making the same" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,164, issued on Sept. 1, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Memory device containing constricted channel ends and methods of making the same" was invented by Hiroyuki Tanaka (Yokkaichi, Japan), Masanori Tsutsumi (Yokkaichi, Japan), Kento Sakane (Yokkaichi, Japan) and Teruo Okina (Yokkaichi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory die includes an alternating stack of insulating layers and electrically conductive layers, a dielectric spacer layer underlying the alternating stack, memory opening vertically extending through the alternating stack, and through the dielectric spacer layer, a memory opening ...