US Patent Issued to Sandisk Technologies on Oct. 20 for "Non-volatile memory with smart tail detection read mode without erase time penalty" (Chinese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,770,699, issued on Oct. 20, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Non-volatile memory with smart tail detection read mode without erase time penalty" was invented by Jojo Xing (Shanghai), Xuan Tian (Shanghai), Liang Li (Shanghai) and Vincent Yin (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "To determine NAND memory blocks with an upper tail or a lower tail of select gate threshold voltage levels, a tail detection read is introduced into the erase process. To minimize the time penalty on the erase process, the tail detection read is only performed for a specified loop in the erase verify process. More specifically, in ...