US Patent Issued to Sandisk Technologies on May 26 for "Post-program erase in 3D NAND" (Chinese Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,640,206, issued on May 26, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Post-program erase in 3D NAND" was invented by Ming Wang (Shanghai), Liang Li (Shanghai) and Xuan Tian (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "Technology is disclosed herein for programing memory cells with a post-program erase. In an aspect, the post-program erase includes a bit-level erase that only erases memory cells that are to remain in an erased state after the program operation. Memory cells that are to remain in programmed states may be inhibited from erase during the post-program erase. In an aspect, the post-program erase does not have an...