US Patent Issued to Sandisk Technologies on May 26 for "Buried source line structure for boosting read scheme" (Japanese Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,640,171, issued on May 26, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Buried source line structure for boosting read scheme" was invented by Kiyohiko Sakakibara (Mie, Japan) and Ken Oowada (Fujisawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A non-volatile memory device is provided that includes an alternating stack of conducting layers and dielectric layers, a charge trap layer, a layer of polysilicon, and a tunneling dielectric layer arranged between the charge trap layer and the layer of polysilicon. The charge trap layer extends through the alternating stack of conducting layers and dielectric layers. The layer of polys...