US Patent Issued to Sandisk Technologies on March 31 for "Non-volatile memory with in-place error updating and correction" (Chinese, American Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,592,291, issued on March 31, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Non-volatile memory with in-place error updating and correction" was invented by Liang Li (Shanghai), Ming Wang (Shanghai) and Jiahui Yuan (Fremont, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A non-volatile memory attempts to read a data set from a plurality of non-volatile memory cells in multiple threshold voltages distributions and determines that the data set was not read successfully due to there being too many errors in the data read. In response to determining that the data set was not read successfully, the system identifies memory cells stori...