US Patent Issued to Sandisk Technologies on March 31 for "Magnetoresistive memory device and method of operating same using phase controlled magnetic anisotropy" (California Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,592,267, issued on March 31, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Magnetoresistive memory device and method of operating same using phase controlled magnetic anisotropy" was invented by Alan Kalitsov (San Jose, Calif.), Derek Stewart (Livermore, Calif.) and Bhagwati Prasad (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetoresistive memory cell includes a first terminal electrode, a second terminal electrode, and a magnetoresistive layer stack located between the first terminal electrode and the second terminal electrode and including, from one side to another, a reference layer, a dielectric tunnel barr...