ALEXANDRIA, Va., March 3 -- United States Patent no. 12,566,814, issued on March 3, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).
"Vgs ladder for nand in memory compute" was invented by Jaco Hofmann (Santa Clara, Calif.), Richard New (Palo Alto, Calif.) and Dejan Vucinic (San Jose, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Technology for NAND in-memory compute. A NAND memory system uses a VGS ladder in which the expected (or estimated) voltage at the source terminal of a particular NAND memory cell transistor is factored into the determination of the voltage to apply to the gate. An estimate may be made of what voltage will be at the source terminal of each NAND memory cell transi...