US Patent Issued to Sandisk Technologies on March 24 for "Precharge scheme during programming of a memory device" (California Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,586,646, issued on March 24, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Precharge scheme during programming of a memory device" was invented by Jiacen Guo (Cupertino, Calif.), Han-Ping Chen (San Jose, Calif.), Henry Chin (San Jose, Calif.), Guirong Liang (Cupertino, Calif.) and Xiang Yang (Santa Clara, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The memory device includes at least one memory block with source and drain sides and a plurality of memory cells arranged in a plurality of word lines. The word lines are arranged in a plurality of independently programmable and erasable sub-blocks. Control circuitry is configured ...