ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,652, issued on March 17, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Three-dimensional memory devices having channel cap structures and methods for forming the same" was invented by Bing Zhou (San Jose, Calif.), Raghuveer S. Makala (Campbell, Calif.), Senaka Kanakamedala (San Jose, Calif.), Rahul Sharangpani (Fremont, Calif.) and Adarsh Rajashekhar (Santa Clara, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes an alternating stack of insulating layers and electrically conductive layers, a memory opening vertically extending through the alternating stack and a memory opening fill structure l...