US Patent Issued to Sandisk Technologies on March 17 for "Three-dimensional memory device and method of making thereof using etch stop structures located between tiers" (California Inventors)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,656, issued on March 17, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Three-dimensional memory device and method of making thereof using etch stop structures located between tiers" was invented by Bing Zhou (San Jose, Calif.), Monica Titus (Santa Clara, Calif.), Raghuveer S. Makala (Campbell, Calif.), Rahul Sharangpani (Fremont, Calif.) and Senaka Kanakamedala (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A etch stop structure is formed a sacrificial memory opening fill structure formed within a first-tier memory opening vertically extending through a first-tier alternating stack of first insulating layers and f...