US Patent Issued to Sandisk Technologies on July 14 for "Cross temperature NAND read adjustment" (California Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,682,961, issued on July 14, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Cross temperature NAND read adjustment" was invented by Albert Bor Kai Chen (Milpitas, Calif.), Sujjatul Islam (San Jose, Calif.) and Jiahui Yuan (Fremont, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Technology for re-calibrating a temperature coefficient (Tco) for reading NAND memory cells. The Tco may be re-calibrated based on an amount of data retention impact to NAND memory cells since the NAND memory cells were programmed. The data retention impact may be measured by determining a shift to a candidate Vt distribution. The candidate Vt distribution m...