US Patent Issued to Sandisk Technologies on Feb. 24 for "Non-volatile memory with in-place error correction" (Chinese, American Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,562,234, issued on Feb. 24, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Non-volatile memory with in-place error correction" was invented by Jiahui Yuan (Fremont, Calif.), Ming Wang (Shanghai) and Liang Li (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "In response to determining that a data set was not read successfully, the system identifies memory cells storing error bits that are in upper tails and lower tails of the threshold voltages distributions. To reduce the number of errors, memory cells storing error bits that are in upper tails have their threshold voltages reduced by bit level erase and memory cells storing error...