US Patent Issued to Sandisk Technologies on Feb. 24 for "Non-volatile memory with concurrent programming" (Chinese Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,562,232, issued on Feb. 24, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Non-volatile memory with concurrent programming" was invented by Yichen Wang (Shanghai), Wei Li (Shanghai), Ming Wang (Shanghai) and Liang Li (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "A non-volatile storage apparatus comprises a non-volatile memory divided into blocks, with each block divided into regions. Each region of a same block includes a plurality of non-volatile memory cells controlled by a separate drain side (or different type of) select line for the region such that different regions of a same block are controlled by different drain side ...