US Patent Issued to Sandisk Technologies on Feb. 24 for "Block data encryption of non-volatile memory through selective select gate erase through charge coupled scheme" (Indian Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,561,082, issued on Feb. 24, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Block data encryption of non-volatile memory through selective select gate erase through charge coupled scheme" was invented by Binoy Jose Panakkal (Kochi, India) and Gopu S (Kollam, India).

According to the abstract* released by the U.S. Patent & Trademark Office: "To allow for the erase of the drain side select gates of NAND strings while maintaining the data content of the memory cells, while erase inhibiting the memory cells of a NAND string, holes are generated in the drain region through the gate induced drain leakage (GIDL) mechanism and transferred to under the select gate, where they a...