US Patent Issued to Sandisk Technologies on Feb. 17 for "Three-dimensional memory device including variable thickness semiconductor channels and method of forming the same" (Japanese Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,278, issued on Feb. 17, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Three-dimensional memory device including variable thickness semiconductor channels and method of forming the same" was invented by Tadashi Nakamura (Yokkaichi, Japan) and Nobuyuki Fujimura (Yokkaichi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes an alternating stack of insulating layers and electrically conductive layers, where the electrically conductive layers include word line electrically conductive layers and a first select-level electrically conductive layer, a memory opening vertically extending through the altern...