US Patent Issued to Sandisk Technologies on Aug. 25 for "Word line bias during stripe erase in a memory device" (California Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,718,886, issued on Aug. 25, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Word line bias during stripe erase in a memory device" was invented by Parth Amin (Fremont, Calif.) and Anubhav Khandelwal (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The memory device includes a memory block with an array of memory cells that are arranged in edge word lines and non-edge word lines. Some of the word lines are in a first group to be erased in a first pulse and the others are in a second group to be erased in a second pulse. Circuitry is configured to erase the memory cells. In the first erase pulse, the circuitry applies a firs...