US Patent Issued to Sandisk Technologies on Aug. 25 for "Three-dimensional memory device with reduced neighboring word line interference and methods of forming the same" (California Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,747, issued on Aug. 25, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Three-dimensional memory device with reduced neighboring word line interference and methods of forming the same" was invented by Ramy Nashed Bassely Said (San Jose, Calif.), Sarath Puthenthermadam (San Jose, Calif.), Jiahui Yuan (San Francisco), Raghuveer S. Makala (Campbell, Calif.), Longju Liu (Milpitas, Calif.) and Senaka Kanakamedala (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes an alternating stack of insulating layers and electrically conductive layers, a memory opening vertically extending through the alternating ...