ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,746, issued on Aug. 25, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Three-dimensional memory device including backside semiconductor source structure and methods for forming the same" was invented by Adarsh Rajashekhar (Santa Clara, Calif.), Raghuveer S. Makala (Campbell, Calif.) and Kartik Sondhi (Milpitas, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes an alternating stack of insulating layers and electrically conductive layers located on a semiconductor layer, a memory opening vertically extending through the alternating stack and the semiconductor layer, a memory opening fill structure...