US Patent Issued to Sandisk Technologies on Aug. 25 for "Non-volatile memory with non-discharging read" (California Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,718,891, issued on Aug. 25, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Non-volatile memory with non-discharging read" was invented by Wei Cao (Fremont, Calif.), Jiahui Yuan (Fremont, Calif.) and Xiang Yang (Santa Clara, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A non-volatile storage apparatus continuously maintains unselected word lines for multiple regions in multiple blocks at one or more overdrive voltages and continuously maintains unselected select lines for multiple regions in multiple blocks at one or more unselected voltages while performing a read process for non-volatile memory cells in one or more regions of o...