ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,718,878, issued on Aug. 25, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"NAND die with wire-bond inductive compensation for altered bond wire bandwidth in memory devices" was invented by John Contreras (Palo Alto, Calif.), Nagesh Vodrahalli (Los Altos, Calif.) and Md. Sayed Mobin (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A storage device includes a substrate of a memory package that includes a first pin pad, a controller mounted on the substrate and electrically connected to the first pin pad, the controller being configured to manage data communications on a data channel, and a first memory die. The first memory...