US Patent Issued to Sandisk Technologies on Aug. 18 for "Variable resistance for current control in nonvolatile memory arrays" (California Inventors)

ALEXANDRIA, Va., Aug. 18 -- United States Patent no. 12,712,045, issued on Aug. 18, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Variable resistance for current control in nonvolatile memory arrays" was invented by Ashraf B. Islam (El Dorado Hills, Calif.), Jaydip Patel (Folsom, Calif.), Nicolas Irizarry (Folsom, Calif.) and William Sheung (Folsom, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An apparatus includes one or more control circuit configured to connect to a nonvolatile memory cell structure that includes nonvolatile memory cells each having a programmable resistive element. The one or more control circuit is configured to receive an address that corresponds to a location...