US Patent Issued to Sandisk Technologies on Aug. 11 for "Dual word line all-string preprogram for lateral data retention improvement" (American, Japanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,706,168, issued on Aug. 11, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Dual word line all-string preprogram for lateral data retention improvement" was invented by Zhenni Wan (San Jose, Calif.), Bo Lei (San Jose, Calif.) and Ken Oowada (Chigasaki, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory apparatus and operating method are provided. The apparatus includes memory cells each connected to one of a plurality of word lines. The memory cells are configured to retain a threshold voltage corresponding to one of a plurality of data states. A control means is configured to apply a pre-programming pulse of a pre-program volt...