US Patent Issued to Sandisk Technologies on April 7 for "Memory device including composite metal oxide semiconductor channels and methods for forming the same" (California Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,749, issued on April 7, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Memory device including composite metal oxide semiconductor channels and methods for forming the same" was invented by Peter Rabkin (Cupertino, Calif.) and Masaaki Higashitani (Cupertino, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers, a memory opening vertically extending through the alternating stack, and a memory opening fill structure located in the memory opening and including a memory film and a vertical composite metal oxide semicon...