US Patent Issued to Sandisk Technologies on April 14 for "Uniform GIDL current during NAND erase" (California Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,603,135, issued on April 14, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Uniform GIDL current during NAND erase" was invented by Jiahui Yuan (Fremont, Calif.), Sarath Puthenthermadam (San Jose, Calif.) and Abu Naser Zainuddin (Milpitas, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Technology for gate induced drain leakage (GIDL) erase of NAND strings. The drain-to-gate voltage of a source side select transistor (or transistors) is trimmed to compensate for different physical characteristics of the NAND strings in different regions of a memory system. The drain-to-gate voltage generates a GIDL current at the source end of a N...