ALEXANDRIA, Va., March 3 -- United States Patent no. 12,567,736, issued on March 3, was assigned to SAMSUNG SDI Co. LTD. (Yongin-si, South Korea).
"Inrush current reduction circuit" was invented by Byeong Jo Kim (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "An inrush current reduction circuit includes a switching element connected between a power side of a BMS module and a power side of a battery cell module and having a gate connected to a ground side through a first resistor, a diode connected at one side thereof to a source of the switching element, a second resistor connected at one side thereof to the other side of the diode and connected at the other side thereof to the ground s...