US Patent Issued to SAMSUNG ELECTRONICS on Sept. 8 for "Semiconductor device including backside isolation structure and placeholder isolation structure" (New York, Virginia Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,219, issued on Sept. 8, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (South Korea).

"Semiconductor device including backside isolation structure and placeholder isolation structure" was invented by Jaehong Lee (Latham, N.Y.), Seung Min Song (Clifton Park, N.Y.) and Kang-ill Seo (Springfield, Va.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor device including: a 1st source/drain region and a 1st backside contact structure, vertically below the 1st source/drain region, connected to the 1st source/drain region; a 2nd source/drain region and a 1st placeholder isolation structure vertically below the 2nd source/drain region; a...