US Patent Issued to SAMSUNG ELECTRONICS on Sept. 8 for "Semiconductor device including a plurality of gate lines on a plurality of fin structures having different width portions" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,249, issued on Sept. 8, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Semiconductor device including a plurality of gate lines on a plurality of fin structures having different width portions" was invented by Hyungju Ryu (Suwon-si, South Korea), Sangjin Kim (Suwon-si, South Korea), Yigwon Kim (Suwon-si, South Korea) and Changmin Park (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device is provided, the semiconductor device including; a substrate; a first fin structure extending on the substrate in a first direction, and having a first fin portion having a first width and a second fin p...