ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,630, issued on Sept. 8, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Nonvolatile memory device for performing multi-plane read operation and operation method thereof" was invented by Yeji Shin (Suwon-si, South Korea) and Seokin Hong (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A nonvolatile memory device includes a cell array divided into a plurality of planes, a voltage generator configured to generate a word line voltage applied to word lines of each of the plurality of planes, a row decoder configured to transmit the word line voltage to the cell array in response to an address, and a control ...