US Patent Issued to SAMSUNG ELECTRONICS on Sept. 8 for "Magnetic tunneling junction device and memory device including the same" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,405, issued on Sept. 8, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Magnetic tunneling junction device and memory device including the same" was invented by Kwangseok Kim (Seoul, South Korea), Seonggeon Park (Seongnam-si, South Korea), Seungjae Lee (Suwon-si, South Korea) and Naoki Hase (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a magnetic tunneling junction device having more stable perpendicular magnetic anisotropy (PMA) and/or increased operating speed, and/or a memory device including the magnetic tunneling junction device. The magnetic tunneling junction device includes a ...