ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,209, issued on Sept. 8, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).
"Integrated circuit device" was invented by Hyunho Noh (Suwon-si, South Korea), Ilgyou Shin (Suwon-si, South Korea), Sangyong Kim (Suwon-si, South Korea) and Youbin Kim (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit device includes an insulating structure, a source/drain region on the insulating structure, a pair of bottom semiconductor sheets being spaced apart from each other with the source/drain region therebetween in a first horizontal direction, a pair of channel regions spaced apart from the insulating str...