US Patent Issued to SAMSUNG ELECTRONICS on Sept. 8 for "CMOS image sensor wherein the isolation structure has two STI and backside trench isolation" (California Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,270, issued on Sept. 8, was assigned to SAMSUNG ELECTRONICS Co. LTD. (South Korea).

"CMOS image sensor wherein the isolation structure has two STI and backside trench isolation" was invented by Tze Ching Fung (Diamond Bar, Calif.) and Yibing Michelle Wang (Temple City, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A pixel cell for a CMOS image sensor includes an isolation structure that isolates a pixel transistor region from a pixel photodiode region. On a front side of the image sensor, the isolation structure includes a first shallow trench isolation (STI) structure, a second STI structure and a semiconductor region between the first STI ...