ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,750,014, issued on Sept. 29, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"RF circuit for preventing damage to power amplifier" was invented by Yousung Lee (Gyeonggi-do, South Korea), Dongil Yang (Gyeonggi-do, South Korea), Yohan Moon (Gyeonggi-do, South Korea), Hyoseok Na (Gyeonggi-do, South Korea) and Taeyoung Kim (Gyeonggi-do, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "According to an embodiment, a Radio Frequency (RF) circuit comprises: a power amplifier; a switching circuit configured to electrically connect the power amplifier to a first switch in case that an output voltage of the power amplifier does not...