US Patent Issued to SAMSUNG ELECTRONICS on Sept. 22 for "Semiconductor device with channel structures and impurity region structures" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,450, issued on Sept. 22, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Semiconductor device with channel structures and impurity region structures" was invented by Taeyong Kwon (Suwon-si, South Korea), Yoonjoong Kim (Suwon-si, South Korea), Seungmin Kim (Suwon-si, South Korea) and Dogeon Lee (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device may include a plurality of first channel structures on a substrate, a plurality of second channel structures on the substrate, a first impurity region structure between the first channel structures, a second impurity region structure between sec...