US Patent Issued to SAMSUNG ELECTRONICS on Sept. 22 for "Magnetic memory device having magnetic tunnel junction patterns and spin-orbit torque lines" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,744,068, issued on Sept. 22, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Magnetic memory device having magnetic tunnel junction patterns and spin-orbit torque lines" was invented by Yongjae Lee (Seongnam-si, South Korea) and Jihun Byun (Yongin-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a magnetic memory device comprising write and read word lines that extend in a first direction on a substrate, the write word line and the read word line spaced apart from each other in a second direction and parallel to a bottom surface of the substrate, first source/drain contacts on one side of the write word...