ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,568, issued on Sept. 22, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).
"Magnetic memory device and method for fabricating the same" was invented by Jun Ho Park (Suwon-si, South Korea) and Byoung Jae Bae (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetic memory device and a method for fabricating the same are provided. The magnetic memory device includes a substrate, a lower insulating layer on the substrate, a memory cell including a first magnetic pattern, a tunnel barrier pattern and a second magnetic pattern, which are sequentially stacked on the lower insulating layer, and a re-deposition in...