US Patent Issued to SAMSUNG ELECTRONICS on Sept. 22 for "Critical dimension inspection method and semiconductor device manufacturing method using the same" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,743,026, issued on Sept. 22, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Critical dimension inspection method and semiconductor device manufacturing method using the same" was invented by Su Bin Kong (Suwon-si, South Korea), Sang-Ho Yun (Suwon-si, South Korea) and Woo Jin Jung (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for inspecting a critical dimension may include providing a substrate, applying a photoresist on the substrate, variably irradiating a dose of light onto the photoresist, performing a photo process to develop the photoresist to form a photoresist pattern, performing an etc...