ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,651, issued on Sept. 1, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Semiconductor memory devices and electronic devices including the semiconductor memory devices" was invented by Seunghan Kim (Suwon-si, South Korea) and Gunhee Cho (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a data input/output (I/O) buffer, a data first-in/first-out (FIFO) circuit, an address comparing circuit. The data I/O buffer provides a memory cell array with write data. The data FIFO circuit includes plurality of data FIFO buffers which store read data that is read from the memory cell...