ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,206, issued on Sept. 1, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Semiconductor device including two-dimensional material and electronic apparatus including the semiconductor device" was invented by Joungeun Yoo (Suwon-si, South Korea), Changhyun Kim (Suwon-si, South Korea), Kyung-Eun Byun (Suwon-si, South Korea), Minsu Seol (Suwon-si, South Korea), Keunwook Shin (Suwon-si, South Korea) and Eunkyu Lee (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device may include a channel layer including a two-dimensional (2D) semiconductor material, a gate insulating layer on a center portio...