ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,190, issued on Sept. 1, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).
"Semiconductor device including inclined channel layer and electronic device including the semiconductor device" was invented by Eunkyu Lee (Suwon-si, South Korea), Keunwook Shin (Suwon-si, South Korea) and Minsu Seol (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device may include a first electrode and a second electrode on a substrate and arranged perpendicular to a surface of the substrate, a plurality of channel layers between the first electrode and the second electrode, and a gate electrode surrounding the pl...