US Patent Issued to SAMSUNG ELECTRONICS on Sept. 1 for "Pattern forming method, semiconductor memory device, and method of manufacturing the same" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,443, issued on Sept. 1, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Pattern forming method, semiconductor memory device, and method of manufacturing the same" was invented by Donghwan Lee (Suwon-si, South Korea), Kanguk Kim (Suwon-si, South Korea), Seokhyun Kim (Suwon-si, South Korea) and Wonchul Lee (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a pattern includes forming an etch target layer over a substrate including a first area and a second area, forming a hardmask structure over the etch target layer, forming a photoresist pattern including a first photoresist pattern includ...