US Patent Issued to SAMSUNG ELECTRONICS on Sept. 1 for "Nonvolatile memory device and memory system comprising the same" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,163, issued on Sept. 1, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Nonvolatile memory device and memory system comprising the same" was invented by Moorym Choi (Yongin-si, South Korea), Jungtae Sung (Seoul, South Korea), Sanghee Yoon (Hwaseong-si, South Korea), Wooyong Jeon (Anyang-si, South Korea), Junyoung Choi (Seoul, South Korea) and Yoonjo Hwang (Gimpo-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A nonvolatile memory device includes a first structure and a second structure bonded to the first structure. The second structure includes a low-resistance conductive layer, a common source line layer on...